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| IPB080N06N G IPP080N06N G OptiMOSTM Power-Transistor Features * Low gate charge for fast switching applications * N-channel enhancement - normal level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant * Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID SMDversion 60 7.7 80 V m A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N P-TO220-3-1 080N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 76 320 448 6 20 Unit A I D,pulse E AS dv /dt T C=25 C2) I D=80 A, R GS=25 I D=80 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C V GS P tot T j, T stg T C=25 C 214 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.7 K/W the chip is able to carry 107 A. See figure 3 Rev. 1.05 page 1 2010-01-19 IPB080N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=150 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 2.1 3.0 0.01 Values typ. IPP080N06N G Unit max. 0.7 62 40 K/W 4 1 V A - 1 100 47 1 6.5 6.2 1.5 94 100 8 7.7 - nA m S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.05 page 2 2010-01-19 IPB080N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) IPP080N06N G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=3.3 V GS=0 V, V DS=30 V, f =1 MHz - 2600 660 160 14 15 32 14 3500 880 240 20 23 50 20 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=80 A, V GS=0 to 10 V - 14 8 29 35 70 5.4 26 19 10 43 52 93 35 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=80 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.91 53 85 80 320 1.3 65 110 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.05 page 3 2010-01-19 IPB080N06N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPP080N06N G 250 90 80 200 70 60 150 P tot [W] I D [A] 100 50 0 0 50 100 150 200 50 40 30 20 10 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 1 s limited by on-state resistance 10 s 100 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 102 DC 1 ms I D [A] 10 ms 101 Z thJC [K/W] 0.2 10-1 0.1 0.05 0.02 100 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.05 page 4 2010-01-19 IPB080N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 240 220 20 V 10 V 7V IPP080N06N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 28 26 24 6.5 V 200 180 160 22 20 5V 5.5 V R DS(on) [m] 140 18 16 14 12 10 I D [A] 120 100 80 60 40 5V 6V 6V 5.5V 6.5 V 7V 8 6 4 2 0 0 1 2 3 4 5 0 20 40 60 80 10 V 20 V 20 0 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 140 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 120 80 100 80 60 60 g fs [S] 40 20 175 C 25 C I D [A] 40 20 0 0 1 2 3 4 5 6 7 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.05 page 5 2010-01-19 IPB080N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 IPP080N06N G 3.5 1500 A 15 3 150 A R DS(on) [m] 2.5 98 % 10 V GS(th) [V] typ 2 1.5 5 1 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 25 C 175C 98% 102 Ciss 175 C C [pF] I F [A] 103 Coss 101 25C 98% 100 Crss 102 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 2.5 V DS [V] V SD [V] Rev. 1.05 page 6 2010-01-19 IPB080N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 25 C 100 C IPP080N06N G 14 Typ. gate charge V GS=f(Q gate); I D=80 A pulsed parameter: V DD 12 30 V 10 12 V 48 V 150 C 8 101 V GS [V] 100 101 102 103 I AV [A] 6 4 2 100 0 0 20 40 60 80 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 50 T j [C] Rev. 1.05 page 7 2010-01-19 IPB080N06N G PG-TO-263 (D-Pak) PG-TO-263 (D-Pak) IPP080N06N G Rev. 1.05 page 8 2010-01-19 IPB080N06N G PG-TO220-3: Outline IPP080N06N G Rev. 1.05 page 9 2010-01-19 IPB080N06N G IPP080N06N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.05 page 10 2010-01-19 |
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